| PART |
Description |
Maker |
| IRFL014N |
55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的，1.9AN沟道HEXFET功率MOSFET5V的，1.9A沟道的HEXFET功率马鞍山场效应管）
Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A)
Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFIZ48N IRFIZ48 IRFIZ48NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=36A)
|
IRF[International Rectifier]
|
| IRFP064N IRFP064NPBF |
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A?
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A)
Power MOSFET(Vdss=55V, Rds(on)=0.008ohm, Id=110A?)
|
IRF[International Rectifier]
Power MOSFET
|
| HUFA75332S3S HUFA75332G3 HUFA75332P3 HUFA75332S3ST |
66A/ 55V/ 0.016 Ohm. N-Channel UltraFET Power MOSFETs
Discrete Automotive N-Channel UltraFET Power MOSFET, 55V, 60A, 0.019 Ohm @ Vgs = 10V, T0263/D2PAK Package
60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF5M4905 IRF5M4B905 |
Avalanche Energy Ratings
THRU-HOLE (TO-254AA) 55V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.03ohm, Id=-35A*)
|
International Rectifier
|
| HUFA75329S3S HUFA75329G3 HUFA75329P3 HUFA75329S3ST |
Discrete Automotive N-Channel UltraFET Power MOSFET, 55V, 49A, 0.024 Ohms @ VGS = 10V TO-263/D2PAK Package
49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs
49A 55V 0.024 Ohm N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFR2905ZPBF IRFU2905ZPBF |
HEXFET? Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mΩ , ID = 42A )
HEXFET垄莽 Power MOSFET ( VDSS = 55V , RDS(on) = 14.5m楼? , ID = 42A )
HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mヘ , ID = 42A )
|
International Rectifier
|
| IRFU4105Z IRFR4105Z |
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A) 功率MOSFET（讥\u003d 55V的，的Rds（on）\u003d 24.5mohm，身份证\u003d 30A条）
Power MOSFET(Vds=55V / Rds(on)=24.5mohm / Id=30A)
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| SPP80N03S2L-06 SPB80N03S2L-06 SPI80N03S2L-06 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAk, RDSon = 5.9mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 6.2mOhm, 80A, LL
|
INFINEON[Infineon Technologies AG]
|
| SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.1 mOhm, 80A, NL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.4 mOhm, 80A, NL
OptiMOS Power-Transistor 的OptiMOS功率晶体
80 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
|
INFINEON[Infineon Technologies AG]
|
|
